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Title: In situ deposition of BaF sub 2 as a buffer layer and the superconducting thin films of Y-Ba-Cu-O on silicon substrates by metalorganic chemical vapor deposition

Journal Article · · Journal of Applied Physics; (USA)
DOI:https://doi.org/10.1063/1.345020· OSTI ID:6837014
; ; ;  [1]
  1. School of Electrical Engineering, University of Oklahoma, Norman, Oklahoma 73019 (USA) Computer Science, University of Oklahoma, Norman, Oklahoma 73019 (USA)

High throughput, sharp interfaces, and selective deposition with direct ion-, electron-, and photon-beam-controlled techniques are some of the key driving forces for the development of superconducting thin films by the metalorganic chemical vapor deposition technique. In this paper, we report on the {ital in} {ital situ} deposition of a buffer layer of BaF{sub 2} and high-temperature superconducting thin films of Y-Ba-Cu-O by metalorganic chemical vapor deposition (MOCVD) on silicon substrates. These films have an on-set temperature of 90 K and zero resistance at 73 K. The use of BaF{sub 2} as a buffer layer on Si substrates suggests the possibility of three-dimensional integration with high-temperature superconducting thin films, for hybrid superconductor/semiconductor devices as well as superconducting switches and other related devices. To the best of our knowledge, this is the first report of the deposition of high-temperature superconducting thin films on Si by MOCVD.

OSTI ID:
6837014
Journal Information:
Journal of Applied Physics; (USA), Vol. 67:8; ISSN 0021-8979
Country of Publication:
United States
Language:
English