Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Thin films of Y-Ba-Cu-O on silicon and silicon dioxide

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.99670· OSTI ID:5451941
Thin films of the high-temperature superconductor Y-Ba-Cu-O near the 1:2:3 stoichiometry were deposited on single-crystal silicon and oxidized silicon with a zirconia buffer layer. Zero-resistance transition temperatures up to 83 K have been measured on the films formed by a process of sequential evaporation and furnace annealing.
Research Organization:
GE Research and Development Center, Schenectady, New York 12301
OSTI ID:
5451941
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 52:14; ISSN APPLA
Country of Publication:
United States
Language:
English

Similar Records

Characterization of thin films of Y-Ba-Cu-O on oxidized silicon with a zirconia buffer layer
Journal Article · Mon Jun 13 00:00:00 EDT 1988 · Appl. Phys. Lett.; (United States) · OSTI ID:5221098

Y-Ba-Cu-O superconducting thin films by simultaneous or sequential evaporation
Journal Article · Sun Feb 14 23:00:00 EST 1988 · Appl. Phys. Lett.; (United States) · OSTI ID:5680381

Y-Ba-Cu-O thin films prepared by a multilayer vacuum method
Journal Article · Sun Feb 14 23:00:00 EST 1988 · Appl. Phys. Lett.; (United States) · OSTI ID:5681211