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Characterization of thin films of Y-Ba-Cu-O on oxidized silicon with a zirconia buffer layer

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.99749· OSTI ID:5221098
Thin films of the high-temperature superconductor Y-Ba-Cu-O with zero-resistance transition temperatures up to 83 K have been recently reported by using a zirconia buffer layer on the primary materials of interest for electronics, Si and SiO/sub 2/. In this letter, various characteristics of these films are discussed. Microstructural analysis using transmission electron microscopy shows the complex morphology of the unoriented polycrystalline films. Elemental depth profiling by x-ray photoelectron spectroscopy shows the effectiveness of the zirconia buffer layer in preventing interdiffusion; fluorine is found throughout the film at an abundance of 4 at. % The critical current density was measured as a function of temperature; its value is 5 kA cm/sup -2/ at 4.2 K.
Research Organization:
GE Research and Development Center, Schenectady, New York 12301
OSTI ID:
5221098
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 52:24; ISSN APPLA
Country of Publication:
United States
Language:
English

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