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High critical currents in Y-Ba-Cu-O films on silicon using YSZ buffer layers

Conference · · IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:5877277
; ; ; ;  [1];  [2]
  1. Xerox Palo Alto Research Center, CA (United States)
  2. Stanford Univ., CA (United States). Dept. of Applied Physics
Exceptionally high quality films of Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7{minus}x} (YBCO) were successfully grown epitaxially on Si(100) wafers with a buffer layer of yttria-stabilized zirconia (YSZ) using a fully in-situ pulsed laser deposition (PLD) process. Critical current densities of a 30-nm thick film are 2 {times} 10{sup 7} at 4.2 K and 2.2 {times} 10{sup 6} at 77 K. Zero- resistance critical temperatures are about 87 K, the transition width is 1 K, and normal-state resistivity is 0.28 mOhm-cm at 300 K. In this paper the authors describe the crystallographic and chemical structure of the interfaces and their role in film formation. The crystal quality of YSZ buffer layers on Si is not degraded by decomposition reactions, as is YBCO directly on Si or SiO{sub 2}, and cube- on-cube orientation of the YSZ cubic fluorite on Si(100) surfaces can be made to occur very effectively.
OSTI ID:
5877277
Report Number(s):
CONF-900944--
Conference Information:
Journal Name: IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 27:2
Country of Publication:
United States
Language:
English