Radiation-hardened MOS device response to high dose rate irradiations as a function of temperature
Conference
·
OSTI ID:6567915
The effect of the device temperature during irradiation at high dose rates has been investigated for transistors and ICs over the MIL-STD temperature range, -55 to 125/degree/C. At low temperatures, large increases in transistor leakage current was observed due to large shifts in the threshold voltages of parasitic field oxide transistors. The response of hardened field oxide devices and their effects on IC performance at high dose rates and low temperatures will be discussed for several different process conditions. 7 refs., 3 figs.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6567915
- Report Number(s):
- SAND-88-2248C; CONF-890212-2; ON: DE88015258
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360206* -- Ceramics
Cermets
& Refractories-- Radiation Effects
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
CHALCOGENIDES
CURRENTS
ELECTRIC CURRENTS
LEAKAGE CURRENT
MOS TRANSISTORS
OXIDES
OXYGEN COMPOUNDS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
TEMPERATURE EFFECTS
TRANSISTORS
360206* -- Ceramics
Cermets
& Refractories-- Radiation Effects
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
CHALCOGENIDES
CURRENTS
ELECTRIC CURRENTS
LEAKAGE CURRENT
MOS TRANSISTORS
OXIDES
OXYGEN COMPOUNDS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
TEMPERATURE EFFECTS
TRANSISTORS