Temperature effects on the radiation response of MOS devices
The effect of device temperature during irradiation has been investigated for MOS transistors and integrated circuits over the MIL-STD temperature range, -55 to 125/sup 0/C. Large, qualitative changes in transistors and 16k SRAM response are observed both at high and low temperatures. Although changes in transistor response are generally consistent with one'e previous expectations, it is not always straightforward to predict circuit response as a function of temperature. For low dose rate (0.27 rad/s) irradiations of 16k SRAMs, the failure dose at 25/sup 0/C is at least twice that of 125/sup 0/C. This reduction in failure dose, as verified by SPICE simulation, is likely a result of a large increase in SRAM cell imbalance.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (US)
- OSTI ID:
- 6177020
- Report Number(s):
- CONF-880730-
- Journal Information:
- IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. 35:6; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
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46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
654001 -- Radiation & Shielding Physics-- Radiation Physics
Shielding Calculations & Experiments
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
ELECTRONIC CIRCUITS
INTEGRATED CIRCUITS
IRRADIATION
MICROELECTRONIC CIRCUITS
MOS TRANSISTORS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SIMULATION
TEMPERATURE DEPENDENCE
TRANSISTORS