Influence of temperature during 640-MeV proton irradiation of formation of radiation defects in n-type silicon

Journal Article · Wed Oct 01 04:00:00 EDT 1980 · Sov. Phys. - Semicond. (Engl. Transl.); (United States)

OSTI ID:6557330

Kuznetsov, V I; Lugakov, P F

A study was made of the nature and efficiency of formation of radiation defects in n-type silicon (rhoapprox. =180 ..cap omega...cm) subjected to ''hot'' irradiation (T/sub irr/=30--700 /sup 0/C) with 640-MeV protons. The experimental results deduced from measurements of the Hall effect indicated that the following defects were formed at various stages of such irradiation: A centers, E centers, oxygen--divacancy complexes, oxygen--carbon--divacancy complexes, and intrinsic radiation defects (divacancies and various polyvacancy or interstitial complexes contributing the levels at E/sub c/ - 0.24, E/sub v/+0.29, and E/sub v/+0.32 eV to the band gap). These intrinsic radiation defects were found mainly in the central parts (cores) of defect clusters produced by irradiation, while impurity--primary defect complexes were usually found at the periphery of such clusters. An increse of the irradiation temperature reduced the size of the clusters. This was due to the fact that an increase in T/sub irr/ enhanced annihilation of the primary radiation defects and reduced the efficiency of introduction of these defects in the peripheral parts of the clusters.

• Research Organization: Scientific-Research Institute of Applied Physics Problems at the V. I. Lenin Belorussian State Univerisity, Minsk
• OSTI ID: 6557330
• Journal Information: Sov. Phys. - Semicond. (Engl. Transl.); (United States), Journal Name: Sov. Phys. - Semicond. (Engl. Transl.); (United States) Vol. 14:10; ISSN SPSEA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
CATIONS
CHARGED PARTICLES
COLLISIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELEMENTS
ENERGY LEVELS
HIGH TEMPERATURE
HYDROGEN IONS
HYDROGEN IONS 1 PLUS
ION COLLISIONS
IONS
MEDIUM TEMPERATURE
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMIMETALS
SILICON
TEMPERATURE DEPENDENCE