Recombination in n-type silicon irradiated with high-energy gamma rays

Journal Article · Sat Oct 01 04:00:00 EDT 1977 · Sov. Phys. - Semicond. (Engl. Transl.); (United States)

OSTI ID:5121333

Lugakov, P F; Tkachev, V D; Shusha, V V

An investigation was made of the recombination of nonequilibrium carriers in very pure zone-grown n-type silicon crystals (rhoapprox.2000 ..cap omega...cm) irradiated with high-energy (E/sub m/=100 MeV) gamma rays. Such irradiation produced clusters of intrinsic defects (or disordered regions) consisting of divacancies which gave rise to levels at which recombination took place.

• Research Organization: Scientific-Research Institute of Applied Physics, Problems at the V. I. Lenin Belorussian State University, Minsk
• OSTI ID: 5121333
• Journal Information: Sov. Phys. - Semicond. (Engl. Transl.); (United States), Journal Name: Sov. Phys. - Semicond. (Engl. Transl.); (United States) Vol. 11:10; ISSN SPSEA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
CARRIER LIFETIME
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTROMAGNETIC RADIATION
ELEMENTS
ENERGY LEVELS
ENERGY RANGE
GAMMA RADIATION
IONIZING RADIATIONS
LIFETIME
MEV RANGE
MEV RANGE 100-1000
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
RADIATION EFFECTS
RADIATIONS
SEMIMETALS
SILICON
VACANCIES