Influence of the impurity composition on the formation of recombination centers during irradiation of n-type silicon with high-energy. gamma. rays

Journal Article · Tue May 01 04:00:00 EDT 1979 · Sov. Phys. - Semicond. (Engl. Transl.); (United States)

OSTI ID:5834722

Lugakov, P F; Tkachev, V D; Shusha, V V

An analysis of the temperature dependences of the nonequilibrium carrier lifetime tau was used to determine the influence of the impurity composition on the formation of recombination centers during irradiation of n-type silicon (rho=10--500 ..cap omega..xcm) with high-energy (E/sub max/=100 MeV) ..gamma.. rays. The efficiency of formation of the dominant recombination centers and the nature of annealing of the irradiated samples were practically independent of the dopant (phosphorus) concentration and crystal growth method. These results, together with the energy level of the recombination centers (E/sub c/-0.42 eV) and the temperature of their complete annealing (approx.300 /sup 0/C), led to the conclusion that the main recombination centers were divacancies which were components of clusters formed by fast recoil atoms that appeared as a result of photonuclear interactions.

• Research Organization: Scientific-Research Institute of Applied Physics Problems at the V. I. Lenin Belorussian State University, Minsk
• OSTI ID: 5834722
• Journal Information: Sov. Phys. - Semicond. (Engl. Transl.); (United States), Journal Name: Sov. Phys. - Semicond. (Engl. Transl.); (United States) Vol. 13:5; ISSN SPSEA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
CHARGE CARRIERS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTROMAGNETIC RADIATION
ELEMENTS
ENERGY RANGE
GAMMA RADIATION
HIGH TEMPERATURE
IMPURITIES
IONIZING RADIATIONS
MEV RANGE
MEV RANGE 10-100
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
RADIATION EFFECTS
RADIATIONS
RECOMBINATION
SEMIMETALS
SILICON
TEMPERATURE DEPENDENCE
VACANCIES