Formation of radiation defects in n-type silicon by irradiation with 1. 2 GeV electrons

Journal Article · Tue Aug 01 04:00:00 EDT 1978 · Sov. Phys. - Semicond. (Engl. Transl.); (United States)

OSTI ID:6556186

Kasilov, V I; Lugakov, P F; Maslov, N I; Filippov, I M

The paper reports the results of a study of radiation defects formed in silicon by bombardment with 1.2 GeV electrons. Samples of n-type silicon of rho=40--400 ..cap omega...cm resistivity were grown by the Czochralski method nd by zone melting in vacuum. The temperature dependences of the Hall coefficient and electrical conductivity were determined. It was found that irradiation with 1.2 GeV electrons produces radiation defects which give rise to the same spectrum of energy levels in the band gap of n-type Si as irradiation with electrons of lower energies. Moreover, irradiation of n-type Si with 1.2 GeV electrons may generate disordered regions or defect clusters.

• Research Organization: Scientific-Research Institute of Applied Physics Problems at the V. I. Lenin Belorussian State University, Minsk
• OSTI ID: 6556186
• Journal Information: Sov. Phys. - Semicond. (Engl. Transl.); (United States), Journal Name: Sov. Phys. - Semicond. (Engl. Transl.); (United States) Vol. 12:8; ISSN SPSEA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
COLLISIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON COLLISIONS
ELEMENTS
ENERGY LEVELS
ENERGY RANGE
GEV RANGE
GEV RANGE 01-10
HALL EFFECT
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMIMETALS
SILICON
TEMPERATURE DEPENDENCE