Rapid thermal annealing of oxygen-vacancy centers in O-implanted silicon

Conference · Thu Jan 01 04:00:00 EST 1987

OSTI ID:6544738

Stein, H J

Infrared absorption by localized vibrational modes has been used to investigate rapid thermal annealing (RTA) of oxygen-vacancy (O-V) defects in O-implanted Si. At least three processes are involved in the annealing of O-V defects. An activation energy of 1.0 /sup + -/ 0.2 eV for a process leading to O/sub 2/-V formation is attributed to O-V diffusion. The final O-V annealing stage is attributed to oxygen clustering around O/sub 2/-V centers. Processes observed here in RTA are expected to be operative during implantation at the temperatures (400 to 600/sup 0/C) used for production of silicon-on-insulator structures.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6544738
• Report Number(s): SAND-86-2644C; CONF-870438-12; ON: DE87008645
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ABSORPTION SPECTRA
ACTIVATION ENERGY
ANNEALING
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELEMENTS
ENERGY
ENERGY RANGE
HEAT TREATMENTS
INFRARED SPECTRA
ION IMPLANTATION
IONS
KEV RANGE
KEV RANGE 100-1000
NONMETALS
OXYGEN
OXYGEN IONS
POINT DEFECTS
SEMIMETALS
SILICON
SPECTRA
VACANCIES