Effects of vacancy-type defects on electrical-activation of P{sup +} implanted into silicon

Book · Sat Nov 01 04:00:00 EST 1997

OSTI ID:541113

Watanabe, M; Kitano, T; Asada, S ^[1]

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1. NEC Corp., Sagamihara, Kanagawa (Japan). ULSI Device Development Labs.; and others

The effects of vacancy-type defects induced by ion implantation on the electrical-activation of implanted phosphorus by rapid thermal annealing (RTA) are investigated using the positron annihilation technique, secondary ion mass spectroscopy (SIMS) and the spreading resistance (SR) method. P{sup +} ions are implanted into bare Si wafers and into Si through SiO{sub 2} films at 700 keV with doses of the order of 1 {times} 10{sup 13} cm{sup {minus}2}. After implantation, rapid thermal annealing (RTA) is performed at temperatures between 600 and 1,100 C for 20 sec. The result shows that vacancy-type defects compensate the electrical-activation of P. The species of main defects for compensating the electrical-activation is identified as a divacancy (V{sub 2}) from the lifetime of positrons. Effects of recoiled oxygen on the electrical-activation are attributed to the formation of vacancy-oxygen complexes just below the SiO{sub 2}/Si interface and a resultant decrease in the diffusion length of vacancy-type defects.

• OSTI ID: 541113
• Report Number(s): CONF-961202--; ISBN 1-55899-343-6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTAL DEFECTS
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
ION IMPLANTATION
PHOSPHORUS IONS
PHYSICAL RADIATION EFFECTS
SILICON