Effects of vacancy-type defects on electrical-activation of P{sup +} implanted into silicon
Book
·
OSTI ID:541113
- NEC Corp., Sagamihara, Kanagawa (Japan). ULSI Device Development Labs.; and others
The effects of vacancy-type defects induced by ion implantation on the electrical-activation of implanted phosphorus by rapid thermal annealing (RTA) are investigated using the positron annihilation technique, secondary ion mass spectroscopy (SIMS) and the spreading resistance (SR) method. P{sup +} ions are implanted into bare Si wafers and into Si through SiO{sub 2} films at 700 keV with doses of the order of 1 {times} 10{sup 13} cm{sup {minus}2}. After implantation, rapid thermal annealing (RTA) is performed at temperatures between 600 and 1,100 C for 20 sec. The result shows that vacancy-type defects compensate the electrical-activation of P. The species of main defects for compensating the electrical-activation is identified as a divacancy (V{sub 2}) from the lifetime of positrons. Effects of recoiled oxygen on the electrical-activation are attributed to the formation of vacancy-oxygen complexes just below the SiO{sub 2}/Si interface and a resultant decrease in the diffusion length of vacancy-type defects.
- OSTI ID:
- 541113
- Report Number(s):
- CONF-961202--; ISBN 1-55899-343-6
- Country of Publication:
- United States
- Language:
- English
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