The effect of excimer laser pretreatment on diffusion and activation of boron implanted in silicon
- Department of Physics, Physical Electronics, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo (Norway)
We have investigated the effect of excimer laser annealing (ELA) on transient enhanced diffusion (TED) and activation of boron implanted in Si during subsequent rapid thermal annealing (RTA). It is observed that ELA with partial melting of the implanted region causes reduction of TED in the region that remains solid during ELA, where the diffusion length of boron is reduced by a factor of {approx}4 as compared to the as-implanted sample. This is attributed to several mechanisms such as liquid-state annealing of a fraction of the implantation induced defects, introduction of excess vacancies during ELA, and solid-state annealing of the defects beyond the maximum melting depth by the heat wave propagating into the Si wafer. The ELA pretreatment provides a substantially improved electrical activation of boron during subsequent RTA.
- OSTI ID:
- 20706455
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 19 Vol. 87; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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