Boron distribution in silicon after multiple pulse excimer laser annealing
- Department of Physics, Physical Electronics, University of Oslo, P.O. Box 1048, Blindern, N-0316 Oslo (Norway)
We have studied B redistribution in Si after excimer laser annealing (ELA) with multiple laser pulses. B was implanted with energies of 1 and 10 keV and doses of 1x10{sup 14} and 1x10{sup 15} cm{sup -2}. ELA with the number of pulses from 1 to 100 was performed at room temperature and 450 deg. C in vacuum. Irrespective of the implantation parameters and the ELA conditions used, a pile-up in the B concentration is observed near the maximum melting depth after ten pulses of ELA. Moreover, a detailed study has revealed that B accumulates at the maximum melt depth gradually with the number of ELA pulses. Besides, an increase in the carrier concentration is observed at the maximum melt depth, suggesting electrical activity of the accumulated B. Formation of Si-B complexes and vacancy accumulation during multiple ELA are discussed as possible mechanisms for the B build-up.
- OSTI ID:
- 20709714
- Journal Information:
- Applied Physics Letters, Vol. 87, Issue 8; Other Information: DOI: 10.1063/1.2032603; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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