N-type doping of Ge by As implantation and excimer laser annealing
- CNR-IMM MATIS and Dipartimento di Fisica Astronomia, Università di Padova, Via Marzolo 8, 35131 Padova (Italy)
- CNR-IMM MATIS and Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania (Italy)
- CNR-IMM, Z.I. VIII Strada 5, 95121 Catania (Italy)
- CNR-IMM, Via del Fosso del Cavaliere 100, 00133 Roma (Italy)
The diffusion and activation of arsenic implanted into germanium at 40 keV with maximum concentrations below and above the solid solubility (8 × 10{sup 19} cm{sup −3}) have been studied, both experimentally and theoretically, after excimer laser annealing (λ = 308 nm) in the melting regime with different laser energy densities and single or multiple pulses. Arsenic is observed to diffuse similarly for different fluences with no out-diffusion and no formation of pile-up at the maximum melt depth. The diffusion profiles have been satisfactorily simulated by assuming two diffusivity states of As in the molten Ge and a non-equilibrium segregation at the maximum melt depth. The electrical activation is partial and decreases with increasing the chemical concentration with a saturation of the active concentration at 1 × 10{sup 20} cm{sup −3}, which represents a new record for the As-doped Ge system.
- OSTI ID:
- 22278149
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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