Annealing properties of defects in BF{sub 2}{sup +} implanted silicon

Book · Sat Nov 01 04:00:00 EST 1997

OSTI ID:541119

Kitano, T; Watanabe, M; Yaoita, A ^[1]

---

1. NEC Corp., Sagamihara, Kawagawa (Japan). ULSI Device Development Labs.; and others

The annealing properties of defects in BF{sub 2}{sup +} implanted silicon were investigated using positron annihilation, TEM and SIMS techniques. For the as-implanted specimens, the major species of defects was identified to be divacancies. After thermal annealing, vacancy-fluorine complexes were formed. The size of open volume in the vacancy-fluorine complexes became larger with increasing annealing temperature. Even after 1,100 C, the vacancy-fluorine complexes were still stable with the size of open volume close to V{sub 5}. The depth profile of vacancy-fluorine complexes was not largely changed after re-crystallization. In this way, the fluorine atoms played an important role in forming the defects with a large size of open volume. After 1,100 C annealing, the fluorine atoms piled up at two regions; the projected range of fluorine and the original amorphous/crystalline interface, where bubbles were observed by TEM. The vacancy-fluorine complexes detected by positron annihilation might be precursors of the bubbles observed by TEM.

• OSTI ID: 541119
• Report Number(s): CONF-961202--; ISBN 1-55899-343-6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
BORON FLUORIDES
CRYSTAL DEFECTS
CRYSTAL DOPING
DIFFUSION
EXPERIMENTAL DATA
ION IMPLANTATION
MOLECULAR IONS
PHYSICAL RADIATION EFFECTS
SILICON