Role of implantation-induced defects in surface-oriented diffusion of fluorine in silicon
- Department of Physics and Department of Applied Science, Brookhaven National Laboratory, Upton, New York 11973 (United States)
- Instituto per la Ricerca Scientifica e Tecnologica, Divisione di Scienza dei Materiali, 38050 Povo (Italy)
- Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States)
- IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States)
Open-volume defects introduced in Si(100) crystals during fluorine implantation were investigated by variable-energy positron beam depth profiling. The behavior of the implantation-induced lattice defects upon high temperature annealing and their role in the surface-oriented diffusion of F impurities were examined. The defects become mobile and undergo recovery at temperatures below 550 [degree]C, i.e., well before the onset of fluorine diffusion as seen by secondary ion mass spectroscopy (SIMS) profiling. This behavior suggests that after irradiation and annealing the fluorine occupies substitutional sites to which positrons are insensitive. The anomalous F diffusion seen in SIMS has been explained through a two-step diffusion mechanism, in which the diffusion kinetics is determined by dissociation of the substitutional F into an interstitial F and a vacancy, followed by a rapid diffusion of the interstitial F and the vacancy through the crystal to the surface.
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 7165607
- Journal Information:
- Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 76:6; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360606* -- Other Materials-- Physical Properties-- (1992-)
ANTILEPTONS
ANTIMATTER
ANTIPARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIFFUSION
ELEMENTARY PARTICLES
ELEMENTS
FERMIONS
FLUORINE
HALOGENS
IMPURITIES
ION IMPLANTATION
LEPTONS
MASS SPECTRA
MASS TRANSFER
MATTER
NONMETALS
POSITRONS
SEMIMETALS
SILICON
SPECTRA