Role of implantation-induced defects in surface-oriented diffusion of fluorine in silicon
- Brookhaven National Lab., Upton, NY (United States)
- Istituto per la Ricerca Scientifica Tech., Povo (Italy)
- Yale Univ., New Haven, CT (United States). Dept. of Electrical Engineering
- IBM Thomas J. Watson Research Center, Yorktown Heights, NY (United States)
The annealing behaviour open-volume defects introduced in Si(l00) crystals during fluorine implantation and their role in the surface-oriented diffusion of F impurities were investigated by variable-energy positron beam depth profiling. The defects become mobile and undergo recovery at temperatures well below the onset of fluorine diffusion at 550{degree}C as seen by secondary ion mass spectroscopy (SIMS). The results suggests that after irradiation and annealing the F occupies substitutional sites to which positrons are insensitive. The anomalous F diffusion seen in SIMS has been explained through a two-step diffusion mechanism, in which the diffusion kinetics is determined by dissociation of the substitutional F into an interstitial F and a vacancy, followed by their rapid diffusion to the surface.
- Research Organization:
- Brookhaven National Lab., Upton, NY (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 10165571
- Report Number(s):
- BNL--60537; CONF-9405170--5; ON: DE94014905; CNN: Contract OTKA-2106/91
- Country of Publication:
- United States
- Language:
- English
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