Silicon nitride formation from a silane-nitrogen ECR (electron cyclotron resonance) plasma

Conference · Sun Dec 31 23:00:00 EST 1989

OSTI ID:6543589

Barbour, J C; Stein, H J ^[1]; Popov, O A; Yoder, M ^[2]; Outten, C A ^[3]

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1. Sandia National Labs., Albuquerque, NM (USA)
2. Microscience, Inc., Norwell, MA (USA)
3. Michigan Univ., Ann Arbor, MI (USA). Dept. of Nuclear Engineering

Good quality, low temperature silicon nitride and oxynitride films were deposited downstream from an electron cyclotron resonance (ECR) plasma source using SiH{sub 4} and N{sub 2} gas mixtures. The Si/N ratio and H content in the deposited films were determined using Rutherford backscattering spectrometry (RBS)and elastic recoil detection (ERD). The H concentration was minimum for films with compositions closest to that of stoichiometric Si{sub 3}N{sub 4}. The optimum conditions for producing a stoichiometric Si{sub 3}N{sub 4}were: a SiH{sub 4}/N{sub 2} flow ratio between 0.1 and 0.2, and an electrically isolated sample far from the ECR source. Infrared absorption spectra showed that as the film composition changed from N rich to Si rich the dominant bonds associated with H changed from N-H to Si-H. The addition of O{sub 2} to the background gas formed an oxynitride with a low H content similar to the stoichiometric Si{sub 3}N{sub 4} 10 refs., 4 figs., 2 tabs.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• Sponsoring Organization: DOE/DP
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6543589
• Report Number(s): SAND-90-2551C; CONF-901035--5; ON: DE91001265
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
656003* -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BACKSCATTERING
CYCLOTRON RESONANCE
DEPOSITION
DIELECTRIC MATERIALS
ELECTRON CYCLOTRON-RESONANCE
FILMS
INFRARED SPECTRA
MATERIALS
NITRIDES
NITROGEN COMPOUNDS
PLASMA
PNICTIDES
RESONANCE
SCATTERING
SEMICONDUCTOR DEVICES
SILICON COMPOUNDS
SILICON NITRIDES
SPECTRA
STOICHIOMETRY
THIN FILMS