Amorphous and microcrystalline silicon by ECR-CVD using highly dilute silane mixtures
- State Univ. of New York at Buffalo, Amherst, NY (United States). Dept. of Electrical and Computer Engineering
- Evergreen Solar, Waltham, MA (United States)
- NREL, Golden, CO (United States)
Silicon film growth (amorphous and microcrystalline) by double dilution of silane was studied in a microwave CVD system. The double dilution was achieved by using 2% SiH{sub 4} mixtures (balance of Ar or He) further diluted in H{sub 2}. Low hydrogen content films deposited at low temperatures are demonstrated by the technique. The a-Si deposited using 2% SiH{sub 4}/He shows {approximately}8% H{sub 2} content and a compact nature. These films exhibit {sigma}{sub D} of 10{sup {minus}8} S/cm and a {sigma}{sub D}/{sigma}{sub PH} {approximately} 10{sup {minus}4}. {micro}c-Si films deposited on glass at temperatures of 300--450 C, show high crystalline fraction and low dark conductivity ({approximately}10{sup {minus}6} S/cm). With SiH{sub 4}/Ar, crystallinity could be initiated without H{sub 2} addition. Increased grain sizes and decreased H{sub 2} content were seen for increasing H{sub 2} dilution.
- OSTI ID:
- 304348
- Report Number(s):
- CONF-970953--
- Country of Publication:
- United States
- Language:
- English
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