Optimizing the performance of AlGaAs graded index separate confining heterostructure quantum well lasers

Journal Article · Mon Jun 08 04:00:00 EDT 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.97751· OSTI ID:6535863

Shealy, J R

High efficiency AlGaAs laser structures with graded index optical confinement regions and a single GaAs quantum well active region have been prepared using organometallic vapor phase epitaxy. The optimum quantum well thickness was determined to be near 50 A where low internal losses are realized and the resulting threshold current densities were as low as 175 A/cm/sup 2/ on single ended devices with a high reflectivity coating on the rear facet. The high injected carrier levels which are associated with thin quantum well structures lead to a severe degradation in device performance if the gain required to reach lasing threshold becomes too large. If the device length, the facet reflectivities, and the operating temperature were chosen to prevent the injected carrier concentrations in the quantum well from reaching a level coincident with the onset of nonradiative carrier loss mechanisms, single ended power efficiencies exceeded 55% for room-temperature, cw operation at 840 nm.

• Research Organization: General Electric Company, Syracuse, New York 13221, and School of Electrical Engineering, Phillips Hall, Cornell University, Ithaca, New York 14853
• OSTI ID: 6535863
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 50:23; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
DATA
EFFICIENCY
ENERGY
EPITAXY
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
NUMERICAL DATA
OPERATION
OPTICAL PROPERTIES
PERFORMANCE
PHYSICAL PROPERTIES
PNICTIDES
REFLECTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE PROPERTIES
THRESHOLD ENERGY
VAPOR PHASE EPITAXY