Gain and carrier lifetime measurements in AlGaAs single quantum well lasers

Journal Article · Mon Aug 01 04:00:00 EDT 1983 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1983.1072033· OSTI ID:5249893

Dutta, N K; Hartman, R L; Tsang, W T

The authors have measured the optical gain and carrier lifetime (/tau/) at threshold in AlGaAs single quantum well lasers in the temperature range 10-70/sup 0/C. The small shift of the spectral position of the gain peak with increasing injection is evidence for the two-dimensional-like density of states in a quantum well. The net gain G is found to vary linearly with the current I. The observed slow decrease of dG/dI and /tau/ with increasing temperature suggests the absence of a large temperature-dependent nonradiative carrier loss or optical absorption loss in these lasers. This is also supported by the observed low temperature dependence of the external differential quantum efficiency.

• Research Organization: Bell Lab., Murray Hill, NJ 07974
• OSTI ID: 5249893
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-19:8; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CARRIER LIFETIME
EFFICIENCY
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
LIFETIME
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
QUANTUM EFFICIENCY
QUANTUM ELECTRONICS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SPECTRA
TEMPERATURE DEPENDENCE