Preferential sputtering of Si/sub 3/N/sub 4/

Journal Article · Wed Apr 01 04:00:00 EST 1981 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.92446· OSTI ID:6535073

Bhattacharya, R S; Holloway, P H

Auger peaks of 82-eV Si and 381-eV N have been used to study the preferential enrichment of one component of Si/sub 3/N/sub 4/ after sequential sputtering with 0.5- and 2.0-keV Ar/sup +/ and He/sup +/ ions. The results clearly indicate that the element enriched at the surface, due to sputtering, depends on the mass of the impinging ion, and the magnitude of the enrichment depends on the energy of the ion. For example, N was enriched by Ar/sup +/, while Si was enriched by He/sup +/ bombardment. These results are explained by considering direct knockoff and energy transfer processes in sputtering.

• Research Organization: Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611
• OSTI ID: 6535073
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 38:7; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

640301* -- Atomic
Molecular & Chemical Physics-- Beams & their Reactions
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ARGON IONS
AUGER ELECTRON SPECTROSCOPY
CHARGED PARTICLES
COLLISIONS
DATA
DIRECT REACTIONS
ELECTRON SPECTROSCOPY
ELEMENTS
ENERGY RANGE
ENERGY TRANSFER
EV RANGE
EXPERIMENTAL DATA
HELIUM IONS
INFORMATION
IONS
KEV RANGE
KNOCK-OUT REACTIONS
MATHEMATICAL MODELS
NITRIDES
NITROGEN
NITROGEN COMPOUNDS
NONMETALS
NUCLEAR REACTIONS
NUMERICAL DATA
PNICTIDES
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON NITRIDES
SPECTROSCOPY
SPUTTERING
SURFACES