Auger depth profiling and preferential sputtering of platinum nickel silicide

Journal Article · Fri Apr 01 04:00:00 EST 1983 · J. Vac. Sci. Technol., A; (United States)

DOI:https://doi.org/10.1116/1.571906· OSTI ID:5758576

Morgan, A E; Ellwanger, R C

Auger depth profiling measurements are presented of platinum nickel silicide films grown on n-Si and on n/sup +/-Si by annealing a sputter-deposited Pt/sub 0.4/Ni/sub 0.6/ alloy layer at 500 /sup 0/C for 20 min in N/sub 2/. Quantification of the profiles is achieved by calibration with standards. The silicide composition varies with depth and at the interface is Pt/sub x/Ni/sub 1-x/Si with x<<1. Also, total sputtering yields and preferential sputtering coefficients are given for 2 keV, 45/sup 0/, Ar/sup +/ bombardment of the elements and their binary and ternary silicides. The amount of preferential sputtering is practically independent of projectile energy (0.5--5 keV) and of substituting Xe/sup +/ for Ar/sup +/. However, its variation with composition complicates the quantitative analysis of nickel.

• Research Organization: Philips Research Laboratories, Sunnyvale, Signetics Corporation, Sunnyvale, California 94086
• OSTI ID: 5758576
• Journal Information: J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 1:2; ISSN JVTAD
• Country of Publication: United States
• Language: English

Related Subjects

640301* -- Atomic
Molecular &amp; Chemical Physics-- Beams &amp; their Reactions
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANNEALING
ARGON IONS
AUGER ELECTRON SPECTROSCOPY
CHARGED PARTICLES
COLLISIONS
ELECTRON SPECTROSCOPY
ENERGY RANGE
EV RANGE
EV RANGE 100-1000
FILMS
HEAT TREATMENTS
IONS
KEV RANGE
KEV RANGE 01-10
NICKEL COMPOUNDS
NICKEL SILICIDES
PLATINUM COMPOUNDS
PLATINUM SILICIDES
SILICIDES
SILICON COMPOUNDS
SPECTROSCOPY
SPUTTERING
TRANSITION ELEMENT COMPOUNDS
XENON IONS