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Effect of ion mixing on the depth resolution of sputter depth profiling

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.99977· OSTI ID:6936352
The effect of ion mixing on the depth resolution of sputter depth profiling has been studied using x-ray photoelectron spectroscopy and Ar/sup +/ sputtering of Pt/Zr, Pt/Mo, Pt/Ti, and Pt/Ni interfaces. It is shown that the heat of mixing of binary alloys plays an important role in depth resolution. The measured interface width of bilayers consisting of metals with a large and negative heat of mixing (Pt/Zr and Pt/Ti) is significantly broader than that of metals with a nearly zero heat of mixing (Pt/Mo and Pt/Ni). This observation suggests that the mechanism of ion mixing during sputter depth profiling with ion energies of a few keV is the same as ion mixing with ion energies of several hundred keV; diffusion in thermal spikes is the dominant contribution to ion mixing in the systems investigated.
Research Organization:
General Motors Research Laboratories, Warren, Michigan 48090-9055
OSTI ID:
6936352
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:14; ISSN APPLA
Country of Publication:
United States
Language:
English