Surface segregation and preferential sputtering of bismuth in rf-magnetron-sputtered iron-garnet films

Journal Article · Sat Oct 15 04:00:00 EDT 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.341354· OSTI ID:7063364

Krumme, J; Otterloo, A F; Zalm, P C; Pertruzzello, J

Auger electron spectroscopy, x-ray photoelectron spectroscopy, and secondary-ion mass spectrometry have been used to elucidate the role of surface segregation and preferential sputtering of bismuth in rf-magnetron-sputtered bismuth--iron-garnet films. It turns out that bismuth is enriched by a factor of up to 2.4, as compared to the bulk content, within the first 1--1.5 nm beneath the advancing film surface during growth. Furthermore, Ar/sup +/-ion bombardment at projectile energies as low as 50 eV gives rise to a rather complete depletion of bismuth in the garnet surface. As neither surface segregation nor preferential sputtering of bismuth can be observed in as-polished single-crystalline Bi/sub 12/SiO/sub 20/ used as our reference, we conclude that the bond strength between bismuth and oxygen is weaker than that of the other garnet constituents. This is confirmed by comparing the calculated sputter yield of the element oxide. Thus, bismuth-rich crystallographically perfect epitaxial iron-garnet films can only be grown by sputtering if the growing film is protected against energetic particle bombardment.

• Research Organization: Philips GmbH, Forschungslaboratorium Hamburg, D-2000 Hamburg 54, Federal Republic of Germany
• OSTI ID: 7063364
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 64:8; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

656003* -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARGON IONS
ATOM TRANSPORT
BISMUTH
BISMUTH COMPOUNDS
CHALCOGENIDES
CHARGED PARTICLES
COLLISIONS
ELECTRON SPECTROSCOPY
ELECTRON TUBES
ELECTRONIC EQUIPMENT
ELEMENTS
ENERGY RANGE
EQUIPMENT
EV RANGE
EV RANGE 10-100
FERRITE GARNETS
FILMS
IONS
MAGNETRONS
METALS
MICROWAVE EQUIPMENT
MICROWAVE TUBES
MINERALS
NEUTRAL-PARTICLE TRANSPORT
OXIDES
OXYGEN COMPOUNDS
PHOTOELECTRON SPECTROSCOPY
RADIATION TRANSPORT
SEGREGATION
SILICATE MINERALS
SILICON COMPOUNDS
SILICON OXIDES
SPECTROSCOPY
SPUTTERING
THIN FILMS