Preferential growth of helium-doped Ti films deposited by magnetron sputtering

Journal Article · Sun Nov 15 04:00:00 EST 2009 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.3253087· OSTI ID:22051053

Lei, Zhang; Shi, L Q; He, Z J; Zhang, B; Wang, L B ^[1]

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1. Applied Ion Beam Physics Laboratory, Institute of Modern Physics, Fudan University, Shanghai 20043 (China)

The authors present a study on the influence of the bias voltages on the preferred orientation and microstructure of helium-doped Ti films. The films were deposited in a vacuum chamber by both direct-current magnetron sputtering and electron-cyclotron-resonance plasma-aided magnetron sputtering (ECR-PMS) methods. The preferred orientation and microstructure of the films were analyzed by x-ray diffraction (XRD) and transmission electron microscopy. They found that the preferred crystal orientation of helium-doped Ti films was controllably varied from (002) to (100) orientation by increasing the bias voltage (i.e., ion bombardment current and energy). The dominant bombardment effect on the orientation was from the Ar ions of the anode sheath in the magnetron sputtering plasma, and He bombardment also showed a slight influence on the orientation transformation at low trapped-helium content in the crystal. The XRD peak broadening of helium-doped Ti films prepared by ECR-PMS is much more serious than for conventional magnetron sputtering even at low helium concentrations. It is believed that asynchronous bombardment from He ions in the ECR plasma area and Ar ions in the deposition plasma during film growth significantly decreases the mobility of Ti adatoms on the surface and enhances the growth of helium-induced defects, thus increasing the crystal disorder and influencing the crystal orientation transformation. On the contrary, the sequential bombardment of He and Ar particles can decrease helium-dissolution produced defects and improve crystallization.

• OSTI ID: 22051053
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films Journal Issue: 6 Vol. 27; ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARGON IONS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
CRYSTALLIZATION
CRYSTALS
DEPOSITION
DIRECT CURRENT
DOPED MATERIALS
ELECTRON CYCLOTRON-RESONANCE
GRAIN ORIENTATION
HELIUM
HELIUM IONS
PLASMA
RF SYSTEMS
SPUTTERING
THIN FILMS
TITANIUM
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION