Transmission electron diffraction of Al/Sb films before and after Xe irradiation

Technical Report · Mon Jun 01 04:00:00 EDT 1981

OSTI ID:6522832

Follstaedt, D M; McDonald, J M

Transmission electron diffraction was used to identify the phases present before and after irradiating multiple layers of vapor deposited Al and Sb with 400 keV Xe/sup +/ ions. Films were examined prior to irradiation and fcc Al and hexagonal Sb were identified. Xe irradiation at 80 K and 475 K causes the majority of the Al and Sb to react and form the compound AlSb. However, at 295 K, most of the initial phases remain unreacted even after irradiation to fluences of 2.4 x 10/sup 16/ Xe/cm/sup 2/. During this study four phases were identified: fcc Al, hexagonal Sb, cubic AlSb, and cubic NaCl from the NaCl substrate used to deposit the films upon. The electron diffraction results for these phases are compared with x-ray diffraction results, and are tabulated for future analyses.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6522832
• Report Number(s): SAND-81-0556; ON: DE81024992
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360106* -- Metals & Alloys-- Radiation Effects
ALUMINIUM
ANTIMONY
CHARGED PARTICLES
CRYSTAL-PHASE TRANSFORMATIONS
ELEMENTS
ENERGY RANGE
FILMS
IONS
KEV RANGE
KEV RANGE 100-1000
LOW TEMPERATURE
MEDIUM TEMPERATURE
METALS
PHASE STUDIES
PHASE TRANSFORMATIONS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
TEMPERATURE DEPENDENCE
XENON IONS