Temperature dependence of ion beam mixing in Al

Conference · Thu Jan 01 04:00:00 EST 1981

OSTI ID:5812072

Picraux, S T; Follstaedt, D M; Delafond, J

The atomic mixing of evaporated Al/Sb films and of Al/Ag films on Al <110> crystal substrates by 400 keV Xe ion beams has been investigated. Concentration depth profiles were measured in situ by 1.5 MeV He scattering as a function of Xe fluence from 2 to 32 x 10/sup 15/ Xe/cm/sup 2/. The initial mixing rates are similar at 85 and 300 K; mixing proceeds by rapid motion of Al (approx. = 15 Al/Xe) into and uniformly through the thickness of the Sb film and by a slow motion of Sb (approx. = 0.5 Sb/Xe) into the Al <110> substrate. More rapid Sb mixing into Al occurs for polycrystalline Al. The rate for Al into Sb slows at concentrations approaching the stable AlSb phase. Appreciably higher rates of Sb mixing into Al (2.2 to 2.8 Sb/Xe) occur at 575 K. Mixing rates for the highly soluble system, Al/Ag, are compared to the nearly insoluble Al/Sb at 85 and 300 K. Appreciably higher rates are found for Ag than for Sb, suggesting the influence of chemical driving forces even at these low temperatures.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5812072
• Report Number(s): SAND-81-1556C; CONF-811122-29; ON: DE82004294
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360102* -- Metals &amp; Alloys-- Structure &amp; Phase Studies
ALLOYS
ALUMINIUM ALLOYS
ANTIMONY ALLOYS
BEAMS
CRYSTAL STRUCTURE
ION BEAMS
MICROSTRUCTURE
MIXING
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SILVER ALLOYS
TEMPERATURE DEPENDENCE