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Epitaxial Tl sub 2 CaBa sub 2 Cu sub 2 O sub 8 thin films with low 9. 6 GHz surface resistance at high power and above 77 K

Journal Article · · Applied Physics Letters; (USA)
DOI:https://doi.org/10.1063/1.104262· OSTI ID:6521539
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  1. Superconductor Technologies Inc., Santa Barbara, CA (USA)

We report measurements of the dc and microwave properties of epitaxial thin films of Tl{sub 2}CaBa{sub 2}Cu{sub 2}O{sub 8} on LaAlO{sub 3}. ac magnetic susceptibility measurements yield critical temperatures at the transition midpoint {ital T}{sub {ital c}}{similar to}100 K and 10--90% transition widths of {similar to}1.0 K. We observed a critical current density of 1.06{times}10{sup 6} A/cm{sup 2} at 77 K measured by dc transport. We measured a low-power surface resistance of {ital R}{sub {ital s}}=0.2 m{Omega} at 9.55 GHz and 77 K. This is {similar to}50 times lower than oxygen-free high-conductivity (OFHC) Cu at the same frequency and temperature. At 90 K, {ital R}{sub {ital S}} rises to 0.4 m{Omega}, and at 95 K, {ital R}{sub {ital S}}=0.7 m{Omega}. We measured the microwave power dependence of {ital R}{sub {ital S}} at 77, 90, and 95 K. At high microwave field ({gt}30 G, 77 K) {ital R}{sub {ital s}}=0.8 m{Omega}, more than ten times lower than OFHC Cu.

OSTI ID:
6521539
Journal Information:
Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 57:8; ISSN APPLA; ISSN 0003-6951
Country of Publication:
United States
Language:
English