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Single source metalorganic chemical vapor deposition of low microwave surface resistance YBa sub 2 Cu sub 3 O sub 7

Journal Article · · Applied Physics Letters; (USA)
DOI:https://doi.org/10.1063/1.105400· OSTI ID:5620966

YBa{sub 2}Cu{sub 3}O{sub 7} films 2000--7500 A thick were deposited onto (100) LaAlO{sub 3} substrates using a novel single source metalorganic chemical vapor deposition technique. We have so far observed critical currents as high as 4{times}10{sup 6} A/cm{sup 2} at 77 K, transition temperatures ({ital T}{sub {ital c}} at {ital R}=0) as high as 91 K, and the 10 GHz microwave surface resistance {ital R}{sub {ital s}} as low as 40 {mu}{Omega} at 4.2 K and 400 {mu}{Omega} at 77 K.

OSTI ID:
5620966
Journal Information:
Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 59:5; ISSN APPLA; ISSN 0003-6951
Country of Publication:
United States
Language:
English