Comparison of photocurrent enhancement and upset enhancement in CMOS devices in a medium-energy x-ray environment
- Sandia National Lab., Albuquerque, NM (US)
- Technical Support Corp., Albuquerque, NM (US)
- Land M Technologies, Inc., Albuquerque, NM (US)
Radiation-induced upset levels in SA3001 static random access memories (SRAM's) and SA 3246 clock integrated circuits (IC's) have been measured in a medium-energy flash X-ray environment (average photon energy {approximately}100 keV) where dose-enhancing effects are very important. By comparing device responses using a non-dose-enhancing ceramic package lid and a dose-enhancing Kovar/gold lid, dose-enhancement factors for photocurrent and upset were generated. The observed upset enhancement factors of 3.0 {plus minus} 0.5 (SRAM) and 2.2 {plus minus} 0.2 (clock IC) are in excellent agreement with measurements of photocurrent enhancement factors (2.5 {plus minus} 0.5) in diodes processed with the same diffusions as the complementary metal-oxide-semiconductor (CMOS) IC's irradiated in a steady-state X-ray environment. These results indicate that upset is dominated by the radiation-induced transient supply current in these IC's, and that steady-state diode photocurrent measurements are a good predictor of both photocurrent and upset enhancement for IC's made with this technology.
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6517074
- Journal Information:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Vol. 37:4; ISSN 0018-9499; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
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