Insulator photocurrents: Application to dose rate hardening of CMOS/SOI integrated circuits

Journal Article · Mon Jun 01 00:00:00 EDT 1998 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.685216· OSTI ID:644137

Dupont-Nivet, E; Coiec, Y M; Flament, O; Tinel, F ^[1]

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1. CEA, Bruyeres-le-Chatel (France)

Irradiation of insulators with a pulse of high energy x-rays can induce photocurrents in the interconnections of integrated circuits. The authors present, here, a new method to measure and analyze this effect together with a simple model. They also demonstrate that these insulator photocurrents have to be taken into account to obtain high levels of dose-rate hardness with CMOS on SOI integrated circuits, especially flip-flops or memory blocks of ASICs. They show that it explains some of the upsets observed in a SRAM embedded in an ASIC.

• OSTI ID: 644137
• Report Number(s): CONF-970934--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 3Pt3 Vol. 45; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ERRORS
INTEGRATED CIRCUITS
PHOTOCURRENTS
RADIATION HARDENING
SEMICONDUCTOR STORAGE DEVICES
X RADIATION