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U.S. Department of Energy
Office of Scientific and Technical Information

Cadmium sulfide-copper sulfide heterojunction cell research. Quarterly progress report, September 1, 1979-November 30, 1979

Technical Report ·
DOI:https://doi.org/10.2172/6510624· OSTI ID:6510624
Development of the CdS/Cu/sub 2/S cell has focused on the planar junction design with an enhanced open circuit voltage. Various techniques have been tried in an attempt to improve the short circuit current. The maximum achieved is approx. 22 mA/cm/sup 2/ compared to approx. 25 mA/cm/sup 2/ for the traditional solution reaction cell. The highest efficiency achieved to data at open circuit voltages above 0.54 V is 8.26%. The conditions have been established for (CdZn)S deposition and composition to give open circuit voltages of 0.62 V. The influence of texturing on reflectivity has been established and some progress made in reducing the excessive intrusions previously noted in this material. The best efficiency achieved in actual sunlight testing was 8.04% at an open circuit voltage of 0.59 V. Further measurements on capacitance and photocapacitance are reported. Trial encapsulations using Electron Beam deposited glass and the results of attempts to deposit defect free coatings are described.
Research Organization:
Delaware Univ., Newark (USA). Inst. of Energy Conversion
DOE Contract Number:
AC02-77CH00178
OSTI ID:
6510624
Report Number(s):
SERI/PR-8309-1-T1
Country of Publication:
United States
Language:
English