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Cadmium sulfide-copper sulfide heterojunction cell research. Final report, September 1, 1978-August 31, 1979

Technical Report ·
DOI:https://doi.org/10.2172/6428456· OSTI ID:6428456
Research on the planar CdS/Cu/sub 2/S cell to increase the short circuit currents to the levels achieved with the 9.15% textured cell is given. It was established early in the contract that light trapping is essential for high currents and a front surface texturing process has been developed to achieve this. As a result, short circuit currents have been raised to over 21.0 mA/cm/sup 2/. The highest efficiency achieved with the planar junction cell during the contract was 7.81%. Cells heat treated to their highest short circuit currents have shown fill factors below the design requirement of about 74% thus putting a limit on achievable efficiency. Progress has been made on improving the performance of the (CdZn)S/Cu/sub 2/S again with the major emphasis being on improved short circuit currents. Modifying the CdZn/S deposition procedure has resulted in considerably improved short circuit currents to over 21 mA/Cm/sup 2/, and a cell efficiency of 8.19% has been recorded. Fundamental studies have focused on the influence of substrate composition and heat treatment on junction field and collection efficiency. Quantitative analysis has been carried out of the optimal material parameters required to maximize energy converson efficiency. It has been shown a relatively narrow range of properties in the CdS and Cu/sub 2/S is necessary to achieve the highest efficiencies. The encapsulation task has focused on trial depositions of glass applied by electron beam evaporation.
Research Organization:
Delaware Univ., Newark (USA). Inst. of Energy Conversion
DOE Contract Number:
AC02-77CH00178
OSTI ID:
6428456
Report Number(s):
SERI/TR-8063-1-T2
Country of Publication:
United States
Language:
English