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U.S. Department of Energy
Office of Scientific and Technical Information

Cadmium sulfide-copper sulfide heterojunction cell research. Quarterly progress report, December 1, 1979-February 29, 1980

Technical Report ·
DOI:https://doi.org/10.2172/6782696· OSTI ID:6782696
Attempts have been continued to increase the short circuit current in cells of enhanced open circuit voltage. Both deposition of copper on the surface of the Cu/sub 2/S layer and hydrogen plasma treatments have been attempted. To date, no significant increase in ultimate current has been achieved. Various changes in cell production procedure have been made with significant improvements in reproducibility. Improvements in the structure of (CdZn)S layers and resulting cell properties have been achieved using modified substrates based on NiFe. Improvement have been made to the capacitance measuring systems with a consequent gain in resolution, accuracy and reproducibility. Structural studies of the electron beam deposited glass have revealed the presence of cracking and experiments have been carried out to determine the optimum deposition conditions for producing defect-free coatings.
Research Organization:
Delaware Univ., Newark (USA). Inst. of Energy Conversion
DOE Contract Number:
AC02-77CH00178
OSTI ID:
6782696
Report Number(s):
SERI/PR-8309-1-T2
Country of Publication:
United States
Language:
English