Plasma Si nitride: A promising dielectric to achieve high-quality silicon MIS/IL solar cells
Journal Article
·
· J. Appl. Phys.; (United States)
Substantial advantages of plasma Si nitride, for the first time applied to silicon MIS inversion layer (MIS/IL) solar cells, are demonstrated: The highest positive interface charge densities ever used for this type of solar cell (up to 7.2 x 10/sup 12/ cm/sup -2/), absolute stability of the charges up to the nitride despoition temperature (220 and 300 /sup 0/C, respectively), excellent passivation of the entire cell, and good AR coating properties. High uv sensitive MIS/IL solar cells were fabricated with these layers on p--Si (100). AM1 efficiencies of 15% (active area) at 25 /sup 0/C were obtained.
- Research Organization:
- Institut fuer Werkstoffwissenschaften VI, Universitaet Erlangen-Nuernberg, D-8520 Erlangen, West Germany
- OSTI ID:
- 6510537
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 52:4; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
Similar Records
High charge densities in Si-nitride and their effect on the inversion layer mobility of silicon MIS/IL solar cells
High efficiency inversion layer solar cells on polycrystalline silicon by the application of silicon nitride
Characterization and optimization of the Al/SiO{sub x}/p-Si MIS contact in MIS-IL silicon solar cells
Conference
·
Wed Sep 01 00:00:00 EDT 1982
· Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
·
OSTI ID:5249429
High efficiency inversion layer solar cells on polycrystalline silicon by the application of silicon nitride
Conference
·
Mon Nov 30 23:00:00 EST 1981
· IEEE Trans. Electron Devices; (United States)
·
OSTI ID:5166707
Characterization and optimization of the Al/SiO{sub x}/p-Si MIS contact in MIS-IL silicon solar cells
Conference
·
Tue Dec 30 23:00:00 EST 1997
·
OSTI ID:302439
Related Subjects
14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ANTIREFLECTION COATINGS
CHARGE CARRIERS
CHARGE DENSITY
COATINGS
DATA
DEPOSITION
DIELECTRIC MATERIALS
DIRECT ENERGY CONVERTERS
ELECTRICAL EQUIPMENT
ELECTRICAL INSULATORS
ELEMENTS
EQUIPMENT
EXPERIMENTAL DATA
FABRICATION
HIGH TEMPERATURE
INFORMATION
INTERFACES
LAYERS
MATERIALS
METALS
NITRIDES
NITROGEN COMPOUNDS
NUMERICAL DATA
PASSIVATION
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PLASMA
PNICTIDES
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON NITRIDES
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
STABILITY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ANTIREFLECTION COATINGS
CHARGE CARRIERS
CHARGE DENSITY
COATINGS
DATA
DEPOSITION
DIELECTRIC MATERIALS
DIRECT ENERGY CONVERTERS
ELECTRICAL EQUIPMENT
ELECTRICAL INSULATORS
ELEMENTS
EQUIPMENT
EXPERIMENTAL DATA
FABRICATION
HIGH TEMPERATURE
INFORMATION
INTERFACES
LAYERS
MATERIALS
METALS
NITRIDES
NITROGEN COMPOUNDS
NUMERICAL DATA
PASSIVATION
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PLASMA
PNICTIDES
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON NITRIDES
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
STABILITY