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High efficiency inversion layer solar cells on polycrystalline silicon by the application of silicon nitride

Conference · · IEEE Trans. Electron Devices; (United States)
OSTI ID:5166707
Plasma enhanced CVD silicon nitride is introduced for the fabrication of inversion layer solar cells on p-type polycrystalline silicon. The same high interface quality as obtained for Si-nitride on monocrystalline silicon could also be achieved for polycrystalline silicon. This includes high interface charge densities up to 6.6*10/sup 12/ cm/sup -2/ and high UV sensitivity of the cells. For 4-cm/sup 2/ polycrystalline metal-insulator-semiconductor inversion layer (MIS/IL) solar cells active area efficiencies up to 13.4 percent (12.3-percent total area efficiency) under AM1 illumination could be reached, the highest values yet reported for polycrystalline silicon inversion layer solar cells on a total area basis. 15 refs.
Research Organization:
Univ Erlangen-Nuremberg, Ger
OSTI ID:
5166707
Report Number(s):
CONF-810707-
Conference Information:
Journal Name: IEEE Trans. Electron Devices; (United States) Journal Volume: ED-28:12
Country of Publication:
United States
Language:
English