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Inversion layer solar cells on chemically vapor-deposited polycrystalline silicon thin films

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.333159· OSTI ID:5266328
It is demonstrated that the metal-insulator-semiconductor (MIS) inversion layer (IL) process is also suited to fabricating solar cells on fine-grained polycrystalline silicon thin films prepared by low-pressure chemical-vapor deposition (LPCVD). Plasma enhanced silicon nitride was used as dielectric to create a highly conductive inversion layer at the silicon surface. As revealed by high frequency and quasistatic C-V measurements, the insulator/semiconductor interface for fine-grained LPCVD polycrystalline silicon is similar to that for the coarse-grained Wacker Silso material. An excellent external quantum efficiency in the short wavelength region was obtained for solar cells on both materials. For the 1-cm/sup 2/ solar cell on 2-..cap omega.. cm p-doped LPCVD silicon an active area efficiency of eta/sub a/ = 1.8% was obtained. Ways of improving these cells are suggested. A total area AM1 efficiency of 13% was achieved for coprocessed 4-cm/sup 2/ MIS-IL solar cells on Wacker Silso.
Research Organization:
Institut fuer Werkstoffwissenschaften VI, Universitaet Erlangen-Nuernberg, D-8520 Erlangen, Federal Republic of Germany
OSTI ID:
5266328
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 55:4; ISSN JAPIA
Country of Publication:
United States
Language:
English