Cast polycrystalline silicon Schottky-barrier solar cells

Journal Article · Sat Oct 01 04:00:00 EDT 1977 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.89744· OSTI ID:7101414

Lillington, D R; Townsend, W G

Measurements have been made of the electrical and optical properties of polycrystalline metal-insulator-semiconductor Schottky-barrier solar cells (MIS SBSC's) formed by the evaporation of aluminum onto Wacker ''Silso'' cast p-type silicon substrates. Results show that consistently high AM1 efficiencies of over 8% may be achieved using this material and that the V-I characteristics are stable over the period of testing. The short-circuit current of these devices (approx.22 mA cm/sup -2/) indicates that grain-boundary recombinationn is not a serious problem.

• Research Organization: Department of Physics, Royal Military College of Science, Shrivenham, Swindon, United Kingdom
• OSTI ID: 7101414
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 31:7; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALUMINIUM
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRICAL PROPERTIES
ELEMENTS
METALS
OPTICAL PROPERTIES
PERFORMANCE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
RECOMBINATION
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SILICON SOLAR CELLS
SOLAR CELLS