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Title: Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

Abstract

Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

Inventors:
 [1]
  1. Yardley, PA
Publication Date:
Research Org.:
RCA Labs., Princeton, NJ (USA)
OSTI Identifier:
863565
Patent Number(s):
US 4200473
Assignee:
RCA Corporation (New York, NY)
DOE Contract Number:  
EY-76-C-03-1286
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
amorphous; silicon; schottky; barrier; solar; cells; incorporating; insulating; layer; doped; incorporate; adjacent; junction; forming; metal; exhibit; increased; circuit; voltages; compared; standard; rectifying; devices; mis; silicon device; forming metal; barrier solar; circuit voltage; schottky barrier; metal layer; amorphous silicon; solar cell; solar cells; insulating layer; silicon devices; doped layer; rectifying junction; exhibit increased; layer adjacent; silicon schottky; cells incorporating; junction forming; /136/257/427/438/

Citation Formats

Carlson, David E. Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer. United States: N. p., 1980. Web.
Carlson, David E. Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer. United States.
Carlson, David E. Tue . "Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer". United States. https://www.osti.gov/servlets/purl/863565.
@article{osti_863565,
title = {Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer},
author = {Carlson, David E},
abstractNote = {Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1980},
month = {1}
}

Patent:

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