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High charge densities in Si-nitride and their effect on the inversion layer mobility of silicon MIS/IL solar cells

Conference · · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
OSTI ID:5249429
For inversion layer (IL) solar cells a high and stable insulator charge density is required to obtain a low IL sheet resistance. For Si-nitride/thin Si-oxide/p-Si structures, the sheet resistance and the effective IL mobility were determined for very high values of charge density. Despite the IL mobility decreasing with decreasing insulator charge density, the sheet resistance can be significantly lowered. A strong dependence of sheet resistance and effective IL mobility on the oxide treatment is observed. The highest positive charge densities ever reported for MIS devices and IL solar cells could reproducibly be achieved by cesium incorporation into plasma Si-nitride. Their excellent thermal stability and the charge distribution are discussed.
Research Organization:
Institut fur Werkstoffwissenschaften VI Universitat Erlangen-Nurnberg, Erlangen
OSTI ID:
5249429
Report Number(s):
CONF-820906-
Conference Information:
Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
Country of Publication:
United States
Language:
English