Characterization and optimization of the Al/SiO{sub x}/p-Si MIS contact in MIS-IL silicon solar cells

Conference · Wed Dec 31 04:00:00 EST 1997

OSTI ID:302439

Kuhlmann, B; Aberle, A G; Hezel, R ^[1]; Heiser, G ^[2]

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1. Inst. fuer Solarenergieforschung Hameln/Emmerthal, Emmerthal (Germany)
2. Univ. of New South Wales, Sydney, New South Wales (Australia)

The Al/SiO{sub x}/p-Si MIS tunnel contact is an essential part of metal-insulator-semiconductor inversion-layer (MIS-IL) silicon solar cells. The authors experimentally determined the recombination properties (saturation current density J{sub 0} and ideality factor n) of the MSI contact in MIS-IL silicon solar cells fabricated at ISFH. Based on these measurements, it has been possible to resolve the contribution of the MIS contact to the total recombination losses in 1-sun illuminated MIS-IL solar cells by means of 2D numerical modeling. Furthermore, a 2D numerical optimization study is performed where the optimum width of the MIS contact fingers of advanced MIS-IL silicon solar cells is determined.

• OSTI ID: 302439
• Report Number(s): CONF-970953--
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
ALUMINIUM
ELECTRICAL PROPERTIES
ENERGY EFFICIENCY
FILL FACTORS
MATHEMATICAL MODELS
MIS SOLAR CELLS
RECOMBINATION
SILICON
SILICON OXIDES
SILICON SOLAR CELLS