Challenges in hardening technologies using shallow-trench isolation
Challenges related to radiation hardening CMOS technologies with shallow-trench isolation are explored. Results show that trench hardening can be more difficult than simply replacing the trench isolation oxide with a hardened field oxide.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 650373
- Report Number(s):
- SAND--98-0511C; CONF-980705--; ON: DE98005039; BR: DP0102022
- Country of Publication:
- United States
- Language:
- English
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