Chemical solution deposition of SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) films for non-volatile memory applications
- Texas Instruments, Inc., Dallas, TX (United States)
- Sandia National Labs., Albuquerque, NM (United States)
SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) films have received considerable attention for use as non-volatile memory elements. The authors have developed a process to prepare SBT films with good ferroelectric properties at low temperatures. In this paper, they will present strategies used to optimize the properties of the films including film composition, the nature of the substrate (or bottom electrode) used, and the thermal processing cycle. Under appropriate conditions, {approximately} 1,700 {angstrom} films can be prepared which have a large switchable polarization (2P{sub r} > 10{micro}C/cm{sup 2}), and an operating voltage {le} 2.0 V.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 650293
- Report Number(s):
- SAND--98-0708C; CONF-980344--; ON: DE98003352; BR: DP0102031
- Country of Publication:
- United States
- Language:
- English
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