Pulsed laser deposition of SrBi{sub 2}Ta{sub 2}O{sub 9} thin films for non-volatile memory applications
Book
·
OSTI ID:490846
- North Carolina State Univ., Raleigh, NC (United States). Dept. of Materials Science and Engineering
Ferroelectric SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) thin films were synthesized by pulsed laser deposition (PLD) on platinized silicon substrates held at different substrate temperatures, from targets with different compositions. It was necessary to anneal films deposited at low temperature (525 C) at elevated temperatures in an oxygen atmosphere in order to achieve properties comparable to SBT thin films grown by the sol-gel technique. Polarization-electric field hysteresis loops showed saturation in the 2--5 V range with a remnant polarization 2P{sub r} = 8--13 {micro}C/cm{sup 2}. Capacitors showed negligible fatigue up to 10{sup 10} switching cycles.
- Sponsoring Organization:
- Advanced Research Projects Agency, Washington, DC (United States); Deutscher Akademischer Austauschdienst, Bonn (Germany)
- OSTI ID:
- 490846
- Report Number(s):
- CONF-951155--; ISBN 1-55899-300-2
- Country of Publication:
- United States
- Language:
- English
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