Fabrication of ferroelectric SrBi{sub 2}Ta{sub 2}O{sub 9} capacitor films using plasma-assisted metalorganic chemical vapor deposition and their electrical properties
The fabrication of SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) films using plasma-assisted metalorganic chemical vapor deposition (P-MOCVD) has been investigated. Optimizing the process conditions under plasma environment, amorphous SBT films were successfully deposited at a substrate temperature below 300{degree}C, suggesting that the P-MOCVD process effectively utilizes plasma energy to promote the reaction and decomposition of metal organic source molecules. The amorphous SBT films were crystallized to the bilayered perovskite SBT films by a postannealing at 725{degree}C. Thin SBT capacitors fabricated using P-MOCVD showed a good step coverage and the excellent ferroelectric properties including endurance. Low voltage operation below 1.5 V was successfully achieved using a 75 nm SBT capacitor, in which the signal level derived from the hysteresis curve suggests the feasibility of application to a 64 Mbit ferroelectric random access memories. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40203769
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 11 Vol. 89; ISSN 0021-8979
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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