An optimized process for fabrication of SrBi{sub 2}Ta{sub 2}O{sub 9} thin films using a novel chemical solution deposition technique

Journal Article · Mon Nov 01 04:00:00 EST 1999 · Journal of Materials Research

DOI:https://doi.org/10.1557/JMR.1999.0594· OSTI ID:20215438

Kim, Seung-Hyun ^[1]; Kim, D J ^[1]; Lee, K M ^[1]; Park, M ^[1]; Kingon, A I ^[1]; Nemanich, R J ^[2]; Im, J ^[3]; Streiffer, S K ^[3]

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1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)
2. Department of Physics, North Carolina State University, Raleigh, North Carolina 27695 (United States)
3. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

Ferroelectric SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) thin films on Pt/ZrO{sub 2}/SiO{sub 2}/Si were successfully prepared by using an alkanolamine-modified chemical solution deposition method. It was observed that alkanolamine provided stability to the SBT solution by retarding the hydrolysis and condensation rates. The crystallinity and the microstructure of the SBT thin films improved with increasing annealing temperature and were strongly correlated with the ferroelectric properties of the SBT thin films. The films annealed at 800 degree sign C exhibited low leakage current density, low voltage saturation, high remanent polarization, and good fatigue characteristics at least up to 10{sup 10} switching cycles, indicating favorable behavior for memory applications. (c) 1999 Materials Research Society.

• OSTI ID: 20215438
• Journal Information: Journal of Materials Research, Journal Name: Journal of Materials Research Journal Issue: 11 Vol. 14; ISSN JMREEE; ISSN 0884-2914
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BISMUTH OXIDES
CHEMICAL COATING
DIELECTRIC PROPERTIES
EXPERIMENTAL DATA
FERROELECTRIC MATERIALS
HYSTERESIS
LEAKAGE CURRENT
MICROSTRUCTURE
STRONTIUM OXIDES
TANTALUM OXIDES
THIN FILMS