The effect of excess bismuth on the ferroelectric properties of SrBi{sub 2}Ta{sub 2}O{sub 9} thin films
- Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061-0237 (United States)
The effect of excess bismuth on the ferroelectric properties of SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) thin films having a perovskite-like layered structure was investigated for excess bismuth contents ranging from 0{percent} to 100{percent}. For the first time, a limited solid solution of SBT and Bi{sub 2}O{sub 3} was shown to exist when the amount of excess Bi was less than 50{percent}. The formation of a solid solution enhanced the grain size and a-b plane orientation of the films, resulting in substantial improvement in the ferroelectric hysteresis properties of the films. On the other hand, when the amount of excess Bi exceeded 50{percent}, Bi{sub 2}O{sub 3} appeared as a second phase which led to high leakage current and poor ferroelectric hysteresis curves. 30{endash}50{percent} excess Bi content was found to be the optimum composition with respect to grain size, crystallographic orientation and single phase formation. Within this range, SBT films exhibit low leakage current density ({approximately}10{sup {minus}9}A/cm{sup 2}) and maximum remanent polarization (2Pr{approximately}12 {mu}C/cm{sup 2}). {copyright} {ital 1997 Materials Research Society.}
- OSTI ID:
- 545269
- Journal Information:
- Journal of Materials Research, Vol. 12, Issue 6; Other Information: PBD: Jun 1997
- Country of Publication:
- United States
- Language:
- English
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