Characterization of SrBi{sub 2}Ta{sub 2}O{sub 9} ferroelectric thin films deposited at low temperatures by plasma-enhanced metalorganic chemical vapor deposition

Journal Article · Tue Jul 01 04:00:00 EDT 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.119475· OSTI ID:531706

Seong, N; Yoon, S ^[1]; Lee, S ^[2]

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1. Department of Materials Engineering, Chungnam National University, Daeduk Science Town, 305-764 Taejon (Korea)
2. Memory RD Division, Hyundai Electronics Industries Company, Ltd., Ichon-si, Kyoungki-do 467-701 (Korea)

Ferroelectric bismuth-layer SrBi{sub 2}Ta{sub 2}O{sub 9}(SBT) thin films were prepared on Pt/Ti/SiO{sub 2}/Si substrate by plasma-enhanced metalorganic chemical vapor deposition. The films were crystallized at temperatures between 500 and 600{degree}C. The dielectric constant and dissipation factor of SBT films were 320 and 0.04 at an applied frequency of 1 MHz, respectively. The remanent polarization (P{sub r}) and the coercive field (E{sub c}) obtained for a 200 nm thick Sr{sub 0.9}Bi{sub 2.3}Ta{sub 2.0}O{sub 9} films deposited at 550{degree}C were 15{mu}C/cm{sup 2} and 50 kV/cm at an applied voltage of 3 V, respectively. The leakage current density was about 5.0{times}10{sup {minus}8}A/cm{sup 2} at 300 kV/cm. The films showed fatigue-free characteristics up to 1.0{times}10{sup 11} switching cycles under 6 V bipolar pulse. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 531706
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 1 Vol. 71; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BISMUTH COMPOUNDS
BISMUTH OXIDES
CERAMICS
CHEMICAL VAPOR DEPOSITION
DISSIPATION FACTOR
FERROELECTRIC MATERIALS
LEAKAGE CURRENT
PERMITTIVITY
STRONTIUM COMPOUNDS
STRONTIUM OXIDES
TANTALUM OXIDES
TEMPERATURE RANGE 0400-1000 K
THIN FILMS