Characterization of SrBi{sub 2}Ta{sub 2}O{sub 9} ferroelectric thin films deposited at low temperatures by plasma-enhanced metalorganic chemical vapor deposition
- Department of Materials Engineering, Chungnam National University, Daeduk Science Town, 305-764 Taejon (Korea)
- Memory RD Division, Hyundai Electronics Industries Company, Ltd., Ichon-si, Kyoungki-do 467-701 (Korea)
Ferroelectric bismuth-layer SrBi{sub 2}Ta{sub 2}O{sub 9}(SBT) thin films were prepared on Pt/Ti/SiO{sub 2}/Si substrate by plasma-enhanced metalorganic chemical vapor deposition. The films were crystallized at temperatures between 500 and 600{degree}C. The dielectric constant and dissipation factor of SBT films were 320 and 0.04 at an applied frequency of 1 MHz, respectively. The remanent polarization (P{sub r}) and the coercive field (E{sub c}) obtained for a 200 nm thick Sr{sub 0.9}Bi{sub 2.3}Ta{sub 2.0}O{sub 9} films deposited at 550{degree}C were 15{mu}C/cm{sup 2} and 50 kV/cm at an applied voltage of 3 V, respectively. The leakage current density was about 5.0{times}10{sup {minus}8}A/cm{sup 2} at 300 kV/cm. The films showed fatigue-free characteristics up to 1.0{times}10{sup 11} switching cycles under 6 V bipolar pulse. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 531706
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 1 Vol. 71; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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